BCM847DS /T3 NXP Semiconductors, BCM847DS /T3 Datasheet - Page 13

• Manufacturer Part Number: BCM847DS /T3
• Description: Transistors Bipolar - BJT TRANS MATCHED PAIR TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of BCM847DS /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-457
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BCM847DS,135

NXP Semiconductors
12. Revision history
Table 10.
BCM847BV_BS_DS_6
Product data sheet
Document ID
BCM847BV_BS_DS_6
Modifications:
BCM847BV_BS_DS_5
BCM847BS_DS_4
BCM847BS_DS_3
BCM847BS_2
BCM847BS_1
Revision history
Release date
20090828
20060627
20060216
20060123
20050406
20040914
•
•
•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 12 “Package outline SOT363
Figure 14 “Reflow soldering footprint
Figure 15 “Reflow soldering footprint SOT363
Figure 16 “Wave soldering footprint SOT363
Figure 18 “Wave soldering footprint SOT457
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Rev. 06 — 28 August 2009
(SC-88)”: updated
SOT666”: updated
Change notice
-
-
-
-
-
-
(SC-88)”: updated
(SC-74)”: updated
(SC-88)”: updated
NPN/NPN matched double transistors
BCM847BV/BS/DS
Supersedes
BCM847BV_BS_DS_5
BCM847BS_DS_4
BCM847BS_DS_3
BCM847BS_2
BCM847BS_1
-
© NXP B.V. 2009. All rights reserved.
13 of 15