BC847AW T/R NXP Semiconductors, BC847AW T/R Datasheet - Page 2
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BC847AW T/R
Manufacturer Part Number
BC847AW T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BC847BW_TR.pdf
(18 pages)
Specifications of BC847AW T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
110 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Continuous Collector Current
0.1 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BC847AW,115
NXP Semiconductors
2. Pinning information
BC847_SER
Product data sheet
1.4 Quick reference data
Table 2.
Table 3.
Symbol
V
I
h
Pin
SOT23, SOT323, SOT416
1
2
3
SOT883
1
2
3
C
FE
CEO
Parameter
collector-emitter voltage
collector current
DC current gain
Quick reference data
Pinning
h
h
h
FE
FE
FE
base
emitter
collector
base
emitter
collector
Description
All information provided in this document is subject to legal disclaimers.
group A
group B
group C
Rev. 8 — 20 August 2012
open base
V
Conditions
CE
= 5 V; I
45 V, 100 mA NPN general-purpose transistors
C
= 2 mA
Simplified outline
1
2
1
Transparent
top view
3
006aaa144
Min
-
-
110
110
200
420
BC847 series
2
3
Typ
-
-
-
180
290
520
Graphic symbol
© NXP B.V. 2012. All rights reserved.
45
100
220
450
800
Max
800
1
1
sym021
sym021
3
2
3
2
Unit
V
mA
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