BC847AW T/R NXP Semiconductors, BC847AW T/R Datasheet - Page 9
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BC847AW T/R
Manufacturer Part Number
BC847AW T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BC847BW_TR.pdf
(18 pages)
Specifications of BC847AW T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
110 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Continuous Collector Current
0.1 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BC847AW,115
NXP Semiconductors
8. Package outline
BC847_SER
Product data sheet
Fig 13. Package outline SOT23 (TO-236AB)
Fig 14. Package outline SOT323 (SC-70)
All information provided in this document is subject to legal disclaimers.
2.5
2.1
2.2
2.0
Dimensions in mm
Dimensions in mm
Rev. 8 — 20 August 2012
1.4
1.2
1.35
1.15
1
1
3.0
2.8
1.9
2.2
1.8
1.3
45 V, 100 mA NPN general-purpose transistors
3
3
2
0.4
0.3
2
0.45
0.15
0.48
0.38
0.45
0.15
BC847 series
1.1
0.8
0.25
0.10
1.1
0.9
0.15
0.09
04-11-04
04-11-04
© NXP B.V. 2012. All rights reserved.
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