BCV62B T/R NXP Semiconductors, BCV62B T/R Datasheet - Page 11
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BCV62B T/R
Manufacturer Part Number
BCV62B T/R
Description
Transistors Bipolar - BJT TRANS GP TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BCV62B_TR.pdf
(14 pages)
Specifications of BCV62B T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
30 V
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
100 at 100 uA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-143
Continuous Collector Current
0.1 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BCV62B,215
NXP Semiconductors
12. Revision history
Table 10.
BCV62
Product data sheet
Document ID
BCV62 v.4
Modifications:
BCV62_3
BCV62_CNV_2
Revision history
Release date
20100726
19990408
19970618
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Section 1 “Product
Section 3 “Ordering
Section 4
Figure
Section 8 “Test
Figure
Section 10 “Packing
Section 11
Section 13 “Legal
1, 2, 3, 4, 5, 6, 7, 8, 9, 10,
16: superseded by minimized package outline drawing
All information provided in this document is subject to legal disclaimers.
“Marking”: updated
“Soldering”: added
Data sheet status
Product data sheet
Product specification
Product specification
information”: added
information”: updated
profile”: amended
Rev. 4 — 26 July 2010
information”: added
information”: added
11
and 12: added
PNP general-purpose double transistors
Change notice
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Supersedes
BCV62_3
BCV62_CNV_2
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© NXP B.V. 2010. All rights reserved.
BCV62
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