BF822 T/R NXP Semiconductors, BF822 T/R Datasheet - Page 2

• Manufacturer Part Number: BF822 T/R
• Description: Transistors Bipolar - BJT TRANS HV TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BF822 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 300 V
• Collector- Emitter Voltage Vceo Max: 250 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 60 MHz
• Dc Collector/base Gain Hfe Min: 50 at 25 mA at 20 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.05 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BF822,215

NXP Semiconductors
FEATURES
• Low current (max. 50 mA)
• High voltage (max. 300 V).
APPLICATIONS
• Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complements: BF821; BF823.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 16
BF820
BF822
BF820
BF822
TYPENUMBER
NPN high-voltage transistors
* = t : Made in Malaysia.
* = W : Made in China.
TYPE NUMBER
NAME
−
−
MARKING CODE
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
1V*
1X*
(1)
2
DESCRIPTION
PINNING
handbook, halfpage
PACKAGE
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
2
BF820; BF822
MAM255
Product data sheet
1
VERSION
SOT23
SOT23
3
2