BCV61B T/R NXP Semiconductors, BCV61B T/R Datasheet - Page 11

• Manufacturer Part Number: BCV61B T/R
• Description: Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCV61B T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 100 at 100 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-143
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCV61B,215

NXP Semiconductors
12. Revision history
Table 9.
BCV61_4
Product data sheet
Document ID
BCV61_4
Modifications:
BCV61_3
BCV61_CNV_2
Revision history
Release date
20091218
19990408
19970616
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Section 3 “Ordering
Section 4
Figure
Section 8 “Test
Figure
Section 10 “Packing
Section 11
Section 13 “Legal
1, 2, 3, 4, 5, 6, 7, 8, 9, 10,
16: superseded by minimized package outline drawing
“Marking”: updated
“Soldering”: added
Data sheet status
Product data sheet
Product specification
Product specification
information”: added
Rev. 04 — 18 December 2009
information”: updated
information”: added
information”: added
11
and 12: added
NPN general-purpose double transistors
Change notice
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Supersedes
BCV61_3
BCV61_CNV_2
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© NXP B.V. 2009. All rights reserved.
BCV61
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