BSP60 T/R NXP Semiconductors, BSP60 T/R Datasheet - Page 4

• Manufacturer Part Number: BSP60 T/R
• Description: Transistors Bipolar - BJT TRANS DARLINGTON TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BSP60 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 60 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 1000 at 150 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223-4
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: BSP60,115

NXP Semiconductors
2001 May 31
handbook, full pagewidth
PNP Darlington transistors
handbook, full pagewidth
V
V
R1 = 56 Ω; R2 = 10 kΩ; R
V
Oscilloscope: input impedance Z
CE
i
BB
= −10 V; T = 200 μs; t
h FE
= 1.8 V; V
= −10 V.
6000
5000
4000
3000
2000
1000
−10
0
−1
CC
= −10.7 V.
p
= 6 μs; t
B
= 10 kΩ; R
i
= 50 Ω.
r
= t
f
C
≤ 3 ns.
oscilloscope
= 18 Ω.
−1
V i
Fig.2 DC current gain; typical values.
Fig.3 Test circuit for switching times.
(probe)
450 Ω
R1
R2
R B
V BB
4
−10
R C
V CC
DUT
V o
MGD624
(probe)
450 Ω
BSP60; BSP61; BSP62
oscilloscope
−10
2
I C (mA)
Product data sheet
MGD839
−10
3