PIMZ2 T/R NXP Semiconductors, PIMZ2 T/R Datasheet - Page 4
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PIMZ2 T/R
Manufacturer Part Number
PIMZ2 T/R
Description
Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.PUMZ2_TR.pdf
(9 pages)
Specifications of PIMZ2 T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN/PNP
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
50 V
Emitter- Base Voltage Vebo
7 V
Collector-emitter Saturation Voltage
7 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
120 at 1 mA at 6 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-457
Continuous Collector Current
0.15 A
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PIMZ2,115
NXP Semiconductors
7. Characteristics
Table 8.
T
PIMZ2_PUMZ2_6
Product data sheet
Symbol Parameter
Per transistor; for the PNP transistor with negative polarity; unless otherwise specified
I
I
h
TR1 (PNP)
V
f
C
TR2 (NPN)
V
f
C
CBO
EBO
T
T
amb
FE
CEsat
CEsat
c
c
= 25
°
collector-base cut-off current V
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
transition frequency
collector capacitance
collector-emitter saturation
voltage
transition frequency
collector capacitance
C unless otherwise specified.
Characteristics
Conditions
V
V
V
I
I
I
I
I
I
C
E
E
C
E
E
CB
CB
EB
CE
= −2 mA; V
= i
= 2 mA; V
= i
= −50 mA; I
= 50 mA; I
= 60 V; I
= 60 V; I
= 7 V; I
= 6 V; I
e
e
= 0 A; V
= 0 A; V
Rev. 06 — 17 November 2009
C
C
CE
E
E
B
= 0 A
= 1 mA
CE
B
= 0 A
= 0 A; T
CB
= 5 mA
CB
= 12 V; f = 100 MHz
= −5 mA
= −12 V; f = 100 MHz
= −12 V; f = 1 MHz
= 12 V; f = 1 MHz
j
= 150 °C
NPN/PNP general-purpose double transistors
-
100
Min
-
-
-
120
-
-
-
-
PIMZ2; PUMZ2
Typ
-
-
-
250
-
190
2.3
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
100
50
100
560
−500
-
5
250
-
3
Unit
nA
μA
nA
mV
MHz
pF
mV
MHz
pF
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