BCW60C T/R NXP Semiconductors, BCW60C T/R Datasheet - Page 2

• Manufacturer Part Number: BCW60C T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of BCW60C T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 32 V
• Collector- Emitter Voltage Vceo Max: 32 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 40 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: BCW60C,215

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 32 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCW61 series.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
1999 Apr 22
BCW60B
BCW60C
BCW60D
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistors
∗ = t : Made in Malaysia.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
AC∗
AD∗
AB∗
(1)
open emitter
open base
open collector
T
amb
≤ 25 °C
2
PINNING
CONDITIONS
handbook, halfpage
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
−
−
−
−
−
−
−
−65
−
−65
MIN.
DESCRIPTION
2
BCW60 series
MAM255
32
32
5
100
200
200
250
+150
150
+150
Product data sheet
MAX.
1
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT