PMST2369 /T3 NXP Semiconductors, PMST2369 /T3 Datasheet - Page 2
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PMST2369 /T3
Manufacturer Part Number
PMST2369 /T3
Description
Transistors Bipolar - BJT TRANS SW TAPE-11
Manufacturer
NXP Semiconductors
Datasheet
1.PMST2369_TR.pdf
(7 pages)
Specifications of PMST2369 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
500 MHz
Dc Collector/base Gain Hfe Min
40 at 10 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Continuous Collector Current
0.2 A
Maximum Power Dissipation
200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
PMST2369,135
NXP Semiconductors
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 15 V).
APPLICATIONS
• High-speed switching applications, primarily in portable
DESCRIPTION
NPN switching transistor in a SOT323 plastic package.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22
PMST2369
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
and consumer equipment.
stg
j
amb
CBO
CEO
EBO
tot
NPN switching transistor
∗ = t : Made in Malaysia.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
PARAMETER
MARKING CODE
∗1J
(1)
open emitter
open base
open collector
t
T
p
amb
≤ 10 µs
≤ 25 °C; note 1
2
PINNING
handbook, halfpage
CONDITIONS
PIN
Fig.1 Simplified outline (SOT323) and symbol.
1
2
3
Top view
base
emitter
collector
1
3
−
−
−
−
−
−
−
−65
−
−65
DESCRIPTION
MIN.
2
MAM062
Product data sheet
40
15
5
200
300
100
200
+150
150
+150
PMST2369
1
MAX.
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT