PMP5501G /T3 NXP Semiconductors, PMP5501G /T3 Datasheet - Page 12

• Manufacturer Part Number: PMP5501G /T3
• Description: Transistors Bipolar - BJT MATCHED PAIR
• Manufacturer: NXP Semiconductors

Specifications of PMP5501G /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 175 MHz
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-353
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PMP5501G,135

NXP Semiconductors
12. Revision history
Table 10.
PMP5501V_G_Y_3
Product data sheet
Document ID
PMP5501V_G_Y_3
Modifications:
PMP5501V_G_Y_2
PMP5501G_Y_1
Revision history
Release date
20090828
20060919
20060221
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•
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This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 14 “Reflow soldering footprint
Figure 16 “Wave soldering footprint SOT353
Figure 17 “Reflow soldering footprint SOT363
Figure 18 “Wave soldering footprint SOT363
PMP5501V; PMP5501G; PMP5501Y
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Rev. 03 — 28 August 2009
SOT666”: updated
Change notice
-
-
-
(SC-88A)”: updated
(SC-88)”: updated
(SC-88)”: updated
PNP/PNP matched double transistors
Supersedes
PMP5501V_G_Y_2
PMP5501G_Y_1
-
© NXP B.V. 2009. All rights reserved.
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