PMBS3904 T/R NXP Semiconductors, PMBS3904 T/R Datasheet

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PMBS3904 T/R

Manufacturer Part Number
PMBS3904 T/R
Description
Transistors Bipolar - BJT TRANS SW TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBS3904 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
60 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Collector-emitter Saturation Voltage
6 V
Gain Bandwidth Product Ft
180 MHz
Dc Collector/base Gain Hfe Min
40 at 0.1 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.1 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PMBS3904,215
Product data sheet
Supersedes data of 1999 Apr 22
DATA SHEET
PMBS3904
NPN general purpose transistor
DISCRETE SEMICONDUCTORS
2004 Feb 02

Related parts for PMBS3904 T/R

PMBS3904 T/R Summary of contents

Page 1

DATA SHEET PMBS3904 NPN general purpose transistor Product data sheet Supersedes data of 1999 Apr 22 DISCRETE SEMICONDUCTORS 2004 Feb 02 ...

Page 2

... NXP Semiconductors NPN general purpose transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 40 V). APPLICATIONS • General purpose switching and amplification, e.g. telephony and professional communication equipment. DESCRIPTION NPN transistor in a plastic SOT23 package. PNP complement: PMBS3906. MARKING TYPE NUMBER ...

Page 3

... NXP Semiconductors NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain ...

Page 4

... NXP Semiconductors NPN general purpose transistor 250 handbook, full pagewidth h FE 200 150 100 50 0 −2 − handbook, full pagewidth = 500 µ µ Ω 2.5 kΩ 3.9 kΩ Ω. Oscilloscope: input impedance Z i 2004 Feb 02 1 Fig.2 DC current gain ...

Page 5

... NXP Semiconductors NPN general purpose transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Feb scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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