BC807DS T/R NXP Semiconductors, BC807DS T/R Datasheet - Page 3
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BC807DS T/R
Manufacturer Part Number
BC807DS T/R
Description
Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BC807DS_TR.pdf
(7 pages)
Specifications of BC807DS T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
80 MHz
Dc Collector/base Gain Hfe Min
160 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-457
Continuous Collector Current
0.5 A
Maximum Power Dissipation
600 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BC807DS,115
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
CHARACTERISTICS
T
Notes
1. Pulse test: t
2. V
2002 Nov 22
R
Per transistor
I
I
h
V
V
C
f
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BE
PNP general purpose double transistor
th j-a
c
= 25 °C unless otherwise specified.
BE
decreases by approximately −2 mV/K with increasing temperature.
thermal resistance from junction to
ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter voltage
collector capacitance
transition frequency
p
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
note 1
V
V
V
V
V
V
notes 1 and 2
V
V
f = 100 MHz
C
CB
CB
EB
CE
CE
CE
CB
CE
= −500 mA; I
= −5 V; I
= −20 V; I
= −20 V; I
= −1 V; I
= −1 V; I
= −1 V; I
= −10 V; I
= −5 V; I
3
CONDITIONS
C
C
C
C
C
E
E
E
CONDITIONS
= 0
= −100 mA; note 1
= −500 mA; note 1
= −10 mA;
= −500 mA;
B
= 0
= 0; T
= I
= −50 mA; note 1
e
= 0; f = 1 MHz
j
= 150 °C
−
−
−
160
40
−
−
−
80
MIN.
−
−
−
−
−
−
−
9
−
TYP.
VALUE
208
Product data sheet
BC807DS
−100
−5
−100
400
−
−700
−1.2
−
−
MAX.
2
UNIT
.
K/W
nA
μA
nA
mV
V
pF
MHz
UNIT