BC846BPDW1T1 ON Semiconductor, BC846BPDW1T1 Datasheet

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BC846BPDW1T1

Manufacturer Part Number
BC846BPDW1T1
Description
Transistors Bipolar - BJT 100mA 80V Dual
Manufacturer
ON Semiconductor
Datasheet
1.SBC847BPDW1T1G.pdf (17 pages)

Specifications of BC846BPDW1T1

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN/PNP
Collector- Base Voltage Vcbo
- 80 V, + 80 V
Collector- Emitter Voltage Vceo Max
- 65 V, + 65 V
Emitter- Base Voltage Vebo
6 V at NPN, 5 V at PNP
Collector-emitter Saturation Voltage
+/- 65 V
Maximum Dc Collector Current
0.1 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
150 at 10 uA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-70-6
Continuous Collector Current
0.1 A
Maximum Power Dissipation
380 mW
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
3000

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
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Part Number:
BC846BPDW1T1G
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ON Semiconductor
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BC846BPDW1T1G,
SBC846BPDW1T1G,
BC847BPDW1T1G,
SBC847BPDW1T1G Series,
BC848CPDW1T1G
Dual General Purpose
Transistors
NPN/PNP Duals (Complementary)
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 8
MAXIMUM RATINGS − NPN
MAXIMUM RATINGS − PNP
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Emitter−Base Voltage
Collector Current − Continuous
These transistors are designed for general purpose amplifier
Site and Control Change Requirements
Compliant*
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
BC846, SBC846
BC847, SBC847
BC848
BC846, SBC846
BC847, SBC847
BC848
BC846, SBC846
BC847, SBC847
BC848
BC846, SBC846
BC847, SBC847
BC848
Rating
Rating
Symbol
Symbol
V
V
V
V
V
V
CEO
CBO
EBO
CEO
CBO
EBO
I
I
C
C
Value
Value
−100
−5.0
100
−65
−45
−30
−80
−50
−30
6.0
65
45
30
80
50
30
1
mAdc
mAdc
Unit
Unit
V
V
V
V
V
V
†For information on tape and reel specifications,
BC846BPDW1T1G
SBC846BPDW1T1G
SBC846BPDW1T2G
BC847BPDW1T1G
SBC847BPDW1T1G
BC847BPDW1T2G
BC848CPDW1T1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
(Note: Microdot may be in either location)
Q
ORDERING INFORMATION
(4)
(3)
1
MARKING DIAGRAM
http://onsemi.com
XX = Device Code
M = Date Code
G = Pb−Free Package
6
1
CASE 419B
SOT−363
STYLE 1
Mark
XX MG
BB
BB
BB
BF
BF
BF
BL
(5)
G
(2)
Publication Order Number:
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
SOT−363
Package
BC846BPDW1T1/D
(1)
(6)
Q
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
Tape & Reel
2
Shipping
3,000 /
3,000 /
3,000 /
3,000 /
3,000 /
3,000 /
3,000 /
†

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BC846BPDW1T1 Summary of contents

Page 1

... SOT−363 3,000 / (Pb−Free) Tape & Reel SOT−363 3,000 / BF (Pb−Free) Tape & Reel SOT−363 3,000 / BF (Pb−Free) Tape & Reel BF SOT−363 3,000 / (Pb−Free) Tape & Reel BL SOT−363 3,000 / (Pb−Free) Tape & Reel Publication Order Number: BC846BPDW1T1/D † ...

Page 2

SBC847BPDW1T1G Series, BC848CPDW1T1G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR−5 Board (Note 25°C A Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1. FR−5 = 1.0 x 0.75 x 0.062 in. ELECTRICAL CHARACTERISTICS ...

Page 3

SBC847BPDW1T1G Series, BC848CPDW1T1G ELECTRICAL CHARACTERISTICS (PNP) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mA) C BC846, SBC846 Series BC847, SBC847 Series BC848 Series Collector −Emitter Breakdown Voltage (I = −10 mA BC846, ...

Page 4

SBC847BPDW1T1G Series, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC846/SBC846 500 150°C 400 25°C 300 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 1. DC Current Gain vs. Collector Current 1 1.0 C ...

Page 5

SBC847BPDW1T1G Series, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC846/SBC846 6.0 C 4.0 ob 2.0 0.1 0.2 0.5 1.0 2.0 5 REVERSE VOLTAGE (VOLTS) R Figure 7. Capacitance T = 25° ...

Page 6

SBC847BPDW1T1G Series, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS — BC846/SBC846 500 150°C 400 25°C 300 −55°C 200 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 9. DC Current Gain vs. Collector Current 1 0.9 C ...

Page 7

SBC847BPDW1T1G Series, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS — BC846/SBC846 8.0 6 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 - REVERSE VOLTAGE (VOLTS) R Figure 15. Capacitance ...

Page 8

SBC847BPDW1T1G Series, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES 500 150°C 400 25°C 300 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 17. DC Current Gain vs. Collector Current 1.1 1 ...

Page 9

SBC847BPDW1T1G Series, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES 10 7 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8 REVERSE VOLTAGE (VOLTS) R Figure 23. Capacitances 400 300 T = ...

Page 10

SBC847BPDW1T1G Series, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES 500 150°C 400 25°C 300 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 25. DC Current Gain vs. Collector Current 1 0.9 ...

Page 11

SBC847BPDW1T1G Series, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES 7.0 5 3.0 2.0 1.0 -0.6 -1.0 -2.0 -4.0 -6.0 -0 REVERSE VOLTAGE (VOLTS) R Figure 31. Capacitances 400 300 T = 25°C A ...

Page 12

SBC847BPDW1T1G Series, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC848 SERIES 1000 900 800 150°C 700 600 25°C 500 400 −55°C 300 200 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 33. DC Current Gain vs. Collector Current 1.1 ...

Page 13

SBC847BPDW1T1G Series, BC848CPDW1T1G TYPICAL NPN CHARACTERISTICS − BC848 SERIES 10 7 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8 REVERSE VOLTAGE (VOLTS) R Figure 39. Capacitances 400 300 T = ...

Page 14

SBC847BPDW1T1G Series, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS − BC848 SERIES 1000 150°C 900 800 700 25°C 600 500 400 −55°C 300 200 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 41. DC Current Gain vs. Collector Current 1.0 ...

Page 15

SBC847BPDW1T1G Series, BC848CPDW1T1G TYPICAL PNP CHARACTERISTICS − BC848 SERIES 7.0 5 3.0 2.0 1.0 -0.6 -1.0 -2.0 -4.0 -6.0 -0 REVERSE VOLTAGE (VOLTS) R Figure 47. Capacitances 400 300 T = 25°C A ...

Page 16

SBC847BPDW1T1G Series, BC848CPDW1T1G 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0 1.0 -200 1 s -100 T = 25° 25°C - BC558 BC557 -10 BC556 -5.0 BONDING WIRE LIMIT ...

Page 17

... BSC 0.026 BSC 0.10 0.20 0.30 0.004 0.008 0.012 2.00 2.10 2.20 0.078 0.082 0.086 E 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 0.65 0.025 0.65 0.025 mm ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BC846BPDW1T1/D ...

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