BC846BPDW1T1 ON Semiconductor, BC846BPDW1T1 Datasheet - Page 16

• Manufacturer Part Number: BC846BPDW1T1
• Description: Transistors Bipolar - BJT 100mA 80V Dual
• Manufacturer: ON Semiconductor

Specifications of BC846BPDW1T1

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: - 80 V, + 80 V
• Collector- Emitter Voltage Vceo Max: - 65 V, + 65 V
• Emitter- Base Voltage Vebo: 6 V at NPN, 5 V at PNP
• Collector-emitter Saturation Voltage: +/- 65 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70-6
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 3000

-200
-100
-5.0
-2.0
-50
-10
0.001
0.01
1.0
0.1
-1.0
0
Figure 50. Active Region Safe Operating Area
0.02
0.05
0.01
D = 0.5
0.1
0.2
SINGLE PULSE
V
CE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
, COLLECTOR-EMITTER VOLTAGE (V)
-5.0
T
1.0
A
= 25°C
SBC847BPDW1T1G Series, BC848CPDW1T1G
-10
T
BC558
BC557
BC556
J
1 s
= 25°C
10
-30 -45 -65 -100
3 ms
Figure 49. Thermal Response
http://onsemi.com
100
16
t, TIME (ms)
its of the transistor that must be observed for reliable op-
eration. Collector load lines for specific circuits must fall
below the limits indicated by the applicable curve.
or T
curves are valid for duty cycles to 10% provided T
≤ 150°C. T
49. At high case or ambient temperatures, thermal limita-
tions will reduce the power that can be handled to values
less than the limitations imposed by the secondary break-
down.
P
(pk)
The data of Figure 50 is based upon T
DUTY CYCLE, D = t
The safe operating area curves indicate I
A
is variable depending upon conditions. Pulse
1.0 k
t
1
J(pk)
t
2
may be calculated from the data in Figure
1
/t
2
10 k
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
qJA
J(pk)
qJA
(t) = r(t) R
= 328°C/W MAX
− T
C
= P
J(pk)
100 k
qJA
(pk)
1
= 150°C; T
C
R
qJC
−V
(t)
CE
J(pk)
lim-
1.0 M
C