BC846BPDW1T1 ON Semiconductor, BC846BPDW1T1 Datasheet - Page 9

• Manufacturer Part Number: BC846BPDW1T1
• Description: Transistors Bipolar - BJT 100mA 80V Dual
• Manufacturer: ON Semiconductor

Specifications of BC846BPDW1T1

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: - 80 V, + 80 V
• Collector- Emitter Voltage Vceo Max: - 65 V, + 65 V
• Emitter- Base Voltage Vebo: 6 V at NPN, 5 V at PNP
• Collector-emitter Saturation Voltage: +/- 65 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70-6
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 3000

7.0
5.0
3.0
2.0
1.0
10
0.4 0.6
0.8
1.0
Figure 23. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
2.0
TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES
C
ib
SBC847BPDW1T1G Series, BC848CPDW1T1G
4.0
C
ob
6.0
8.0
10
T
A
= 25°C
20
http://onsemi.com
40
9
400
300
200
100
80
60
40
30
20
0.5
Figure 24. Current−Gain − Bandwidth Product
0.7 1.0
I
C
, COLLECTOR CURRENT (mAdc)
2.0
3.0
5.0
7.0
10
20
V
T
A
CE
= 25°C
= 10 V
30
50