BC846BPDW1T1 ON Semiconductor, BC846BPDW1T1 Datasheet - Page 4

• Manufacturer Part Number: BC846BPDW1T1
• Description: Transistors Bipolar - BJT 100mA 80V Dual
• Manufacturer: ON Semiconductor

Specifications of BC846BPDW1T1

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: - 80 V, + 80 V
• Collector- Emitter Voltage Vceo Max: - 65 V, + 65 V
• Emitter- Base Voltage Vebo: 6 V at NPN, 5 V at PNP
• Collector-emitter Saturation Voltage: +/- 65 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70-6
• Continuous Collector Current: 0.1 A
• Maximum Power Dissipation: 380 mW
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 3000

500
400
300
200
100
2.0
1.6
1.2
0.8
0.4
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0
0.02
0.001
0.0001
Figure 3. Base Emitter Saturation Voltage vs.
150°C
−55°C
25°C
−55°C
150°C
25°C
I
Figure 1. DC Current Gain vs. Collector
C
0.05
Figure 5. Collector Saturation Region
/I
B
= 20
20 mA
0.1
I
C
I
C
10 mA
, COLLECTOR CURRENT (A)
I
, COLLECTOR CURRENT (A)
C
0.01
0.2
I
=
0.001
B
Collector Current
, BASE CURRENT (mA)
50 mA
Current
SBC847BPDW1T1G Series, BC848CPDW1T1G
0.5
TYPICAL NPN CHARACTERISTICS − BC846/SBC846
100 mA
1.0
2.0
0.1
0.01
V
CE
5.0
200 mA
T
= 5 V
A
= 25°C
http://onsemi.com
10
20
1
0.1
4
0.30
0.25
0.20
0.15
0.10
0.05
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0
0.2
0.0001
0.0001
Figure 6. Base−Emitter Temperature Coefficient
Figure 2. Collector Emitter Saturation Voltage
150°C
−55°C
Figure 4. Base Emitter Voltage vs. Collector
25°C
I
C
V
0.5
/I
CE
B
= 20
q
= 5 V
VB
1.0
I
I
C
C
for V
I
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
C
, COLLECTOR CURRENT (mA)
vs. Collector Current
0.001
0.001
BE
2.0
Current
5.0
-55°C to 125°C
10
0.01
0.01
20
−55°C
150°C
25°C
50
100
0.1
200
0.1