PMBT2369 /T3 NXP Semiconductors, PMBT2369 /T3 Datasheet - Page 4
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PMBT2369 /T3
Manufacturer Part Number
PMBT2369 /T3
Description
Transistors Bipolar - BJT TRANS GP TAPE-11
Manufacturer
NXP Semiconductors
Datasheet
1.PMBT2369_T3.pdf
(7 pages)
Specifications of PMBT2369 /T3
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
500 MHz
Dc Collector/base Gain Hfe Min
40 at 10 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
0.2 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
PMBT2369,235
NXP Semiconductors
2004 Jan 22
handbook, full pagewidth
NPN switching transistor
V
R1 = 56 Ω; R2 = 1 kΩ; R
V
Oscilloscope input impedance Z
i
BB
= 0.5 to 4.2 V; T = 500 µs; t
= 0.2 V; V
CC
= 2.7 V.
B
= 1 kΩ; R
p
= 10 µs; t
i
= 50 Ω.
C
= 270 Ω.
oscilloscope
r
= t
f
≤ 3 ns.
V i
Fig.2 Test circuit for switching times.
(probe)
450 Ω
R1
R2
R B
V BB
4
R C
V CC
DUT
V o
MLB826
(probe)
450 Ω
oscilloscope
PMBT2369
Product data sheet