PMBTA06 /T3 NXP Semiconductors, PMBTA06 /T3 Datasheet - Page 3

• Manufacturer Part Number: PMBTA06 /T3
• Description: Transistors Bipolar - BJT TRANS SW TAPE-11
• Manufacturer: NXP Semiconductors

Specifications of PMBTA06 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 4 V
• Collector-emitter Saturation Voltage: 4 V
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 100 at 10 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 0.5 A
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: PMBTA06,235

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 22
R
I
I
h
V
V
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BE
NPN general purpose transistor
th(j-a)
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
transition frequency
PARAMETER
PARAMETER
I
I
I
I
I
I
I
E
C
C
C
C
C
C
= 0; V
= 0; V
= 10 mA; V
= 100 mA; V
= 100 mA; I
= 100 mA; V
= 10 mA; V
3
CB
EB
CONDITIONS
= 80 V
= 5 V
CE
CE
B
CE
CE
= 10 mA
= 1 V
= 2 V; f = 100 MHz 100
note 1
= 1 V
= 1 V
CONDITIONS
−
−
100
100
−
−
MIN.
VALUE
500
50
50
−
−
0.25
1.2
−
Product data sheet
MAX.
PMBTA06
UNIT
K/W
nA
nA
V
V
MHz
UNIT