IS61NLF25618A-7.5TQI-TR ISSI, Integrated Silicon Solution Inc, IS61NLF25618A-7.5TQI-TR Datasheet - Page 12

• Manufacturer Part Number: IS61NLF25618A-7.5TQI-TR
• Description: IC SRAM 4MBIT 117MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLF25618A-7.5TQI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (256K x 18)
• Speed: 117MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
LINEAR BURST ADDRESS TABLE
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however,
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
OPERATING RANGE (IS61NLFx)
12
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance
circuit.
Range
Commercial
Industrial
Symbol
T
P
I
V
V
OUT
STG
D
IN
IN
, V
A1', A0' = 1,1
OUT
Ambient Temperature
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to V
Voltage Relative to V
for Address and Control Inputs
-40°C to +85°C
0°C to +70°C
0,0
1,0
(1)
SS
SS
for
for I/O Pins
(MODE = V
3.3V ± 5%
3.3V ± 5%
0,1
V
DD
SS
)
Integrated Silicon Solution, Inc. — www.issi.com
–0.5 to V
3.3V / 2.5V ± 5%
3.3V / 2.5V ± 5%
–65 to +150
–0.3 to 4.6
Value
100
V
1.6
DDQ
DDQ
+ 0.3
Unit
mA
°C
W
V
V
05/28/08
Rev. C