MT48V4M32LFB5-8:G TR Micron Technology Inc, MT48V4M32LFB5-8:G TR Datasheet - Page 28
![IC SDRAM 128MBIT 125MHZ 90VFBGA](/photos/7/23/72313/mfg557-90-vfbga_sml.jpg)
MT48V4M32LFB5-8:G TR
Manufacturer Part Number
MT48V4M32LFB5-8:G TR
Description
IC SDRAM 128MBIT 125MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Specifications of MT48V4M32LFB5-8:G TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (4Mx32)
Speed
125MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Organization
4Mx32
Density
128Mb
Address Bus
14b
Access Time (max)
19/8/7ns
Maximum Clock Rate
125MHz
Operating Supply Voltage (typ)
2.5V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
115mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 13:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
CAS Latency
Upon completion of a burst, assuming no other commands have been initiated, the DQ
will go High-Z. A full-page burst will continue until terminated. (At the end of the page, it
will wrap to column 0 and continue.)
Data from any READ burst may be truncated with a subsequent READ command, and
data from a fixed-length READ burst may be immediately followed by data from a READ
command. In either case, a continuous flow of data can be maintained. The first data
element from the new burst either follows the last element of a completed burst or the
last desired data element of a longer burst that is being truncated. The new READ
command should be issued x cycles before the clock edge at which the last desired data
element is valid, where x = CL - 1.
COMMAND
COMMAND
COMMAND
This is shown in Figure 14 on page 29 for CL = 2 and CL = 3; data element n + 3 is either
the last of a burst of four or the last desired of a longer burst. The 128Mb SDRAM uses a
pipelined architecture and, therefore, does not require the 2n rule associated with a
prefetch architecture. A READ command can be initiated on any clock cycle following a
previous READ command. Full-speed random read accesses can be performed to the
same bank, as shown in Figure 15 on page 30, or each subsequent READ may be
performed to a different bank.
CLK
CLK
CLK
DQ
DQ
DQ
READ
READ
READ
T0
T0
T0
t
t AC
LZ
CL = 1
CL = 2
NOP
NOP
T1
NOP
T1
T1
t
t AC
LZ
D
t OH
OUT
CL = 3
28
T2
NOP
T2
NOP
T2
t
t AC
LZ
D
t OH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OUT
128Mb: x16, x32 Mobile SDRAM
T3
T3
NOP
D
t OH
OUT
DON’T CARE
UNDEFINED
T4
©2001 Micron Technology, Inc. All rights reserved.
READs