MT46H8M16LFBF-6 AT:K Micron Technology Inc, MT46H8M16LFBF-6 AT:K Datasheet

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MT46H8M16LFBF-6 AT:K

Manufacturer Part Number
MT46H8M16LFBF-6 AT:K
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46H8M16LFBF-6 AT:K

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 105°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Mobile LPDDR SDRAM AT Addendum
MT46H8M16LF – 2 Meg x 16 x 4 banks
MT46H4M32LF – 1 Meg x 32 x 4 banks
Features
• Vdd
• Bidirectional data strobe per byte of data (DQS)
• Internal, pipelined double data rate (DDR)
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• Four internal banks for concurrent operation
• Data masks (DM) for masking write data—one mask
• Programmable burst lengths (BL): 2, 4, 8, or 16
• Concurrent auto precharge option is supported
• Auto refresh mode
• 1.8V LVCMOS-compatible inputs
• Deep power-down (DPD)
• Status read register (SRR)
• Selectable output drive strength (DS)
• Clock stop capability
Table 1:
Table 2:
PDF: 09005aef835b8f7c / Source: 09005aef835b8e70
128mb_ddr_mobile_sdram_t35m_AT_addendum.fm - Rev. D 01/09 EN
Architecture
Configuration
Refresh count
Row addressing
Column addressing
architecture; two data accesses per clock cycle
aligned with data for WRITEs
per byte
Speed Grade
/
Vddq = 1.70–1.95V
-54
-75
-5
-6
Key Timing Parameters (CL = 3)
Configuration Addressing
Products and specifications discussed herein are subject to change by Micron without notice.
Clock Rate (MHz)
200
185
166
133
Access Time
5ns
5ns
5ns
6ns
128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum
2 Meg x 16 x 4 banks
8 Meg x 16
4K A[11:0]
512 A[8:0]
4K
1
Notes: 1. Available only for x16 configuration.
Options
• Vdd/Vddq
• Configuration
• Row-size option
• Plastic “green” package
• Timing – cycle time
• Operating temperature range
• Design revision
– 1.8V/1.8V
– 8 Meg x 16 (2 Meg x 16 x 4 banks)
– 4 Meg x 32 (1 Meg x 32 x 4 banks)
– JEDEC-standard option
– 60-ball VFBGA (8mm x 9mm)
– 90-ball VFBGA (10mm x 13mm)
– 5ns @ CL = 3
– 5.4ns @ CL = 3
– 6ns @ CL = 3
– 7.5ns @ CL = 3
– Automotive (–40°C to +105°C)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Available only for x32 configuration.
3. Specified as ambient temperature (T
1 Meg x 32 x 4 banks
©2008 Micron Technology, Inc. All rights reserved.
4 Meg x 32
4K A[11:0]
256 A[7:0]
3
1
4K
2
Marking
Features
8M16
4M32
-54
-75
BF
LF
B5
AT
-5
-6
:K
H
A
).

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MT46H8M16LFBF-6 AT:K Summary of contents

Page 1

Mobile LPDDR SDRAM AT Addendum MT46H8M16LF – 2 Meg banks MT46H4M32LF – 1 Meg banks Features • Vdd Vddq = 1.70–1.95V / • Bidirectional data strobe per byte of data (DQS) • ...

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Figure 1: 128Mb Mobile DDR Part Numbering Micron Technology Product Family 46 = Mobile LPDDR SDRAM Operating Voltage H = 1.8V/1.8V Configuration 8 Meg Meg x 32 Addressing LF = Mobile standard addressing FBGA Part Marking Due ...

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Electrical Specifications The values listed in tables 3 and 4 reflect all specification relaxations necessary to support device operation in the automotive temperature range of –40°C to 105°C. Table 3: Idd Specifications and Conditions (x16/x32) Notes: 1–5 apply to all ...

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Revision History Rev ...

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