MT48H32M16LFBF-6:B TR Micron Technology Inc, MT48H32M16LFBF-6:B TR Datasheet - Page 52
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MT48H32M16LFBF-6:B TR
Manufacturer Part Number
MT48H32M16LFBF-6:B TR
Description
IC SDRAM 512MBIT 166MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H32M16LFBF-75B_TR.pdf
(86 pages)
Specifications of MT48H32M16LFBF-6:B TR
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (32Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- Current page: 52 of 86
- Download datasheet (3Mb)
Figure 22: Terminating a READ Burst
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Note:
Continuous-page READ bursts can be truncated with a BURST TERMINATE command
and fixed-length READ bursts can be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The BURST TERMINATE command
should be issued x cycles before the clock edge at which the last desired data element is
valid, where x = CL - 1. This is shown in Figure 22 (page 52) for each possible CAS
latency; data element n + 3 is the last desired data element of a longer burst.
Command
Command
1. DQM is LOW.
Address
Address
CLK
CLK
DQ
DQ
Bank,
T0
Col n
T0
READ
Bank,
READ
Col n
CL = 2
CL = 3
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
T1
T1
NOP
NOP
52
T2
T2
NOP
NOP
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T3
T3
NOP
NOP
D
D
OUT
OUT
TERMINATE
TERMINATE
BURST
BURST
T4
T4
X = 1 cycle
D
D
OUT
OUT
Transitioning data
X = 2 cycles
T5
T5
NOP
NOP
D
D
OUT
OUT
© 2007 Micron Technology, Inc. All rights reserved.
T6
T6
READ Operation
NOP
NOP
D
OUT
Don’t Care
T7
NOP
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