IS42S32800D-6BL ISSI, Integrated Silicon Solution Inc, IS42S32800D-6BL Datasheet - Page 17
![no-image](/images/manufacturer_photos/0/3/347/issi__integrated_silicon_solution_inc_sml.jpg)
IS42S32800D-6BL
Manufacturer Part Number
IS42S32800D-6BL
Description
IC SDRAM 256MBIT 166MHZ 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Specifications of IS42S32800D-6BL
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-BGA
Organization
8Mx32
Density
256Mb
Address Bus
13b
Access Time (max)
6.5/5.4ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32800D-6BL
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS42S32800D-6BL-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS42S32800D-6BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS42S32800D-6BLI
Manufacturer:
ISSI
Quantity:
20 000
Company:
Part Number:
IS42S32800D-6BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS42S32800D, IS45S32800D
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
Integrated Silicon Solution, Inc. - www.issi.com
Rev. C
12/01/09
SYMBOL PARAMETER
—
—
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
cac
rcd
rac
rc
ras
rp
rrd
ccd
dpl
dal
rbd
wbd
rql
wdl
pql
qmd
dmd
mrd
Clock Cycle Time
Operating Frequency
CAS Latency
Active Command To Read/Write Command Delay Time
RAS Latency (t
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Command Period (ACT[0] to ACT [1])
Column Command Delay Time
(READ, READA, WRIT, WRITA)
Input Data To Precharge Command Delay Time
Input Data To Active/Refresh Command Delay Time
(During Auto-Precharge)
Burst Stop Command To Output in HIGH-Z Delay Time
(Read)
Burst Stop Command To Input in Invalid Delay Time
(Write)
Precharge Command To Output in HIGH-Z Delay Time
(Read)
Precharge Command To Input in Invalid Delay Time
(Write)
Last Output To Auto-Precharge Start Time (Read)
DQM To Output Delay Time (Read)
DQM To Input Delay Time (Write)
Mode Register Set To Command Delay Time
rcd
+ t
cac
)
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
166
10
—
—
—
-2
—
6
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
143
10
—
—
—
—
-2
7
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
133
75
—
—
—
—
-1
2
2
4
9
6
2
2
1
2
4
2
0
2
0
2
0
2
100
2/3
10
-2
-1
2
5
4
7
5
2
2
1
2
4
3
2
0
3
2
0
2
0
2
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
17