BZA856A T/R NXP Semiconductors, BZA856A T/R Datasheet - Page 5

• Manufacturer Part Number: BZA856A T/R
• Description: TVS Diode Arrays DIODE ARRAY TAPE-7
• Manufacturer: NXP Semiconductors
• Series: BZA800Ar

Specifications of BZA856A T/R

• Product Category: TVS Diode Arrays
• Rohs: yes
• Polarity: Unidirectional
• Channels: 4 Channels
• Operating Voltage: 5.88 V
• Peak Surge Current: 3.2 A
• Mounting Style: SMD/SMT
• Termination Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 1.35 (Max) mm W x 2.2 (Max) mm L
• Package / Case: SOT-353
• Peak Pulse Power Dissipation: 24 W
• Factory Pack Quantity: 3000
• Part # Aliases: BZA856A,115

NXP Semiconductors
2000 Sep 25
handbook, halfpage
handbook, halfpage
Quadruple ESD transient voltage
suppressor
Fig.2
T
Fig.4
I ZSM
j
(pF)
C d
(A)
= 25 °C; f = 1 MHz.
10
200
160
120
10
80
40
−1
10
0
1
0
−2
Maximum non-repetitive peak reverse
current as a function of pulse time.
Diode capacitance as a function of reverse
voltage; typical values.
10
5
−1
BZA856A
BZA862A
BZA868A
BZA820A
BZA856A
10
1
BZA862A
BZA868A
BZA820A
t p (ms)
V R (V)
MGT583
MGT585
10
15
5
handbook, halfpage
handbook, halfpage
P
V
Fig.3
(mW)
P ZSM
ZSM
ZSM
P tot
(W)
400
300
200
100
10
10
= V
is the non-repetitive peak reverse voltage at I
0
10
1
2
0
−2
ZSM
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
× I
Fig.5 Power derating curve.
BZA820A
ZSM
.
10
50
−1
BZA856A, BZA862A, BZA868A
BZA800A-series
100
1
T amb (
Product data sheet
t p (ms)
ZSM
MGT586
MGT584
°
.
C)
150
10