MT48H16M32LFCM-6 L IT:B Micron Technology Inc, MT48H16M32LFCM-6 L IT:B Datasheet - Page 63

• Manufacturer Part Number: MT48H16M32LFCM-6 L IT:B
• Description: IC SDRAM 512MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT48H16M32LFCM-6 L IT:B

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 34: WRITE – DQM Operation
Burst Read/Single Write
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Command
BA0, BA1
Address
DQM
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
Note:
t RCD
t CK
The burst read/single write mode is entered by programming the write burst mode bit
(M9) in the mode register to a 1. In this mode, all WRITE commands result in the access
of a single column location (burst of one), regardless of the programmed burst length.
READ commands access columns according to the programmed burst length and se-
quence, just as in the normal mode of operation (M9 = 0).
T1
NOP
1. For this example, BL = 4.
Disable auto precharge
Enable auto precharge
t CMS
t CL
t DS
Column m
WRITE
T2
Bank
D
t CMH
IN
t DH
t CH
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
T3
NOP
63
t DS
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
IN
t DH
t DS
T5
NOP
D
IN
t DH
© 2007 Micron Technology, Inc. All rights reserved.
NOP
T6
WRITE Operation
NOP
T7
Don’t Care