IS61VPS25636A-200TQLI ISSI, Integrated Silicon Solution Inc, IS61VPS25636A-200TQLI Datasheet - Page 19

• Manufacturer Part Number: IS61VPS25636A-200TQLI
• Description: IC SRAM 9MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61VPS25636A-200TQLI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Density: 9Mb
• Access Time (max): 3.1ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 200MHz
• Operating Supply Voltage (typ): 2.5V
• Address Bus: 18b
• Package Type: TQFP
• Operating Temp Range: -40C to 85C
• Number Of Ports: 4
• Supply Current: 275mA
• Operating Supply Voltage (min): 2.375V
• Operating Supply Voltage (max): 2.625V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 36b
• Number Of Words: 256K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
WRITE CYCLE TIMINg
Integrated Silicon Solution, Inc.
Rev. K
01/19/10
DATA
Address
DATA
ADSC
ADSP
CLK
ADV
BWE
BWx
CE2
CE2
OUT
GW
OE
CE
IN
t
t
t
High-Z
CES
CES
High-Z
CES
t
t
SS
AS
Single Write
WR1
t
ADV must be inactive for ADSP Write
DS
t
t
t
WS
WS
WS
t
t
t
t
SH
t
AH
CEH
CEH
CEH
t
KH
WR1
1a
t
KC
t
t
t
WH
WH
WH
t
DH
WR2
t
KL
BW4-BW1 only are applied to first cycle of WR2
t
WS
CE2 and CE2 only sampled with ADSP or ADSC
WR2
2a
CE Masks ADSP
Burst Write
t
AVS
t
WH
2b
t
AVH
2c
ADSP is blocked by CE inactive
2d
ADSC initiate Write
Write
WR3
WR3
3a
Unselected
Unselected with CE2
19