IS61NLF51218A-7.5TQI ISSI, Integrated Silicon Solution Inc, IS61NLF51218A-7.5TQI Datasheet - Page 27

• Manufacturer Part Number: IS61NLF51218A-7.5TQI
• Description: IC SRAM 9MBIT 117MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLF51218A-7.5TQI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (512K x 18)
• Speed: 117MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
TAP Electrical Characteristics Over the Operating Range
Notes:
TAP AC ELECTRICAL CHARACTERISTICS
Notes:
1. t
2. Test conditions are specified using the load in TAP AC test conditions. t
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. E
02/11/2011
Symbol
V
V
V
V
V
V
I
1. All Voltage referenced to Ground.
2. Overshoot: V
X
Symbol Parameter
t
f
t
t
t
t
t
t
t
t
t
t
OH1
OH2
OL1
OL2
IH
IL
CS
TCYC
TF
TH
TL
TMSS
TDIS
CS
TMSH
TDIH
CH
TDOV
TDOX
Undershoot: V
Power-up: V
and t
CH
refer to the set-up and hold time requirements of latching data from the boundary scan register.
TCK Clock cycle time
TCK Clock frequency
TCK Clock HIGH
TCK Clock LOW
TMS setup to TCK Clock Rise
TDI setup to TCK Clock Rise
Capture setup to TCK Rise
TMS hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture hold after Clock Rise
TCK LOW to TDO valid
TCK LOW to TDO invalid
IH
IH
IL
< 2.6V and V
(AC) ≤ V
(AC)
Parameter
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
≤
0.5V for t
DD
+1.5V for t
DD
< 2.4V and V
≤
t
TCYC
≤
t
/2,
TCYC
DDQ
/2,
< 1.4V for t < 200 ms.
(1,2)
1-800-379-4774
Test Conditions
(OVER OPERATING RANGE)
V
I
I
SS
OH
OH
I
I
OL
OL
≤ V I ≤ V
= –2.0 mA
= –100 μA
= 2.0 mA
= 100 μA
R
/t
F
= 1 ns.
(1,2)
DDQ
Min.
100
—
40
40
10
10
10
10
10
10
—
0
Max.
—
10
—
—
—
—
—
—
—
—
20
—
Min.
–0.3
–10
1.7
2.1
1.7
—
—
V
DD
Max.
0.7
0.2
0.7
MHz
Unit
—
—
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
+0.3
Units
μA
V
V
V
V
V
V
27