IS61VPS25636A-200TQI ISSI, Integrated Silicon Solution Inc, IS61VPS25636A-200TQI Datasheet - Page 15

• Manufacturer Part Number: IS61VPS25636A-200TQI
• Description: IC SRAM 9MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61VPS25636A-200TQI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
3.3V I/O AC TEST CONDITIONS
AC TEST LOADS
Integrated Silicon Solution, Inc.
Rev. K
01/19/10
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Output
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Refe rence Level
Output Load
Symbol
c
c
IN
OuT
Parameter
Input Capacitance
Input/Output Capacitance
Z
A
O
(1,2)
= 25°c, f = 1 MHz, V
= 50Ω
Figure 1
dd
= 3.3V.
See Figures 1 and 2
1.5V
0V to 3.0V
1.5 ns
50Ω
1.5V
Unit
Conditions
V
V
OuT
IN
= 0V
= 0V
OUTPUT
3.3V
Max.
6
8
Including
Figure 2
jig and
scope
5 pF
Unit
pF
pF
317 Ω
351 Ω
15