IS61VPS25636A-200TQI ISSI, Integrated Silicon Solution Inc, IS61VPS25636A-200TQI Datasheet - Page 20

• Manufacturer Part Number: IS61VPS25636A-200TQI
• Description: IC SRAM 9MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61VPS25636A-200TQI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
SNOOZE MODE ELECTRICAL CHARACTERISTICS
20
SNOOZE MODE TIMINg
Symbol
I
t
t
t
t
sb
Pds
Pus
ZZI
rZZI
2
CLK
ZZ
Isupply
All Inputs
(except ZZ)
Outputs
(Q)
Parameter
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to SNOOZE current
ZZ inactive to exit SNOOZE current
Deselect or Read Only
ZZ setup cycle
t
ZZI
t
PDS
I
SB2
Conditions
ZZ ≥ Vih
High-Z
Temperature
Range
Com.
Auto.
Ind.
t
Deselect or Read Only
RZZI
ZZ recovery cycle
Integrated Silicon Solution, Inc.
Min. Max.
—
—
—
—
—
t
2
0
PUS
50
60
75
—
—
2
2
Don't Care
operation
Normal
cycle
cycle
cycle
cycle
Unit
mA
ns
01/19/10
Rev. K