MT46H32M32LFCM-5 IT:A Micron Technology Inc, MT46H32M32LFCM-5 IT:A Datasheet - Page 58
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MT46H32M32LFCM-5 IT:A
Manufacturer Part Number
MT46H32M32LFCM-5 IT:A
Description
IC DDR SDRAM 1GBIT 90VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Specifications of MT46H32M32LFCM-5 IT:A
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (32M x 32)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Organization
32Mx32
Density
1Gb
Address Bus
13b
Access Time (max)
6.5/5ns
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
150mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 22: READ Burst
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Bank a, Col n
Bank a, Col n
READ
READ
T0
T0
Notes:
command to the same bank cannot be issued until
time is hidden during the access of the last data elements.
1. D
2. BL = 4.
3. Shown with nominal
CL = 2
NOP
NOP
T1
T1
OUT
n = data-out from column n.
CL = 3
T1n
D
OUT
NOP
NOP
T2
T2
n1
t
AC,
D
OUT
58
t
T2n
T2n
DQSCK, and
n + 1
D
D
OUT
OUT
NOP
NOP
1Gb: x16, x32 Mobile LPDDR SDRAM
T3
T3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
n
n + 2
t
DQSQ.
D
OUT
D
T3n
T3n
OUT
n + 1
n + 3
t
RP is met. Part of the row precharge
D
OUT
NOP
NOP
Don’t Care
T4
T4
n + 2
D
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OUT
n + 3
READ Operation
Transitioning Data
NOP
NOP
T5
T5