BZA868A T/R NXP Semiconductors, BZA868A T/R Datasheet - Page 3
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BZA868A T/R
Manufacturer Part Number
BZA868A T/R
Description
TVS Diode Arrays DIODE ARRAY TAPE-7
Manufacturer
NXP Semiconductors
Series
BZA800Ar
Datasheet
1.BZA862A_TR.pdf
(11 pages)
Specifications of BZA868A T/R
Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Channels
4 Channels
Operating Voltage
7.14 V
Peak Surge Current
2.6 A
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.35 (Max) mm W x 2.2 (Max) mm L
Package / Case
SOT-353
Peak Pulse Power Dissipation
24 W
Factory Pack Quantity
3000
Part # Aliases
BZA868A,115
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. DC working current limited by P
THERMAL CHARACTERISTICS
2000 Sep 25
Per diode
I
I
I
P
P
T
T
R
Z
F
FSM
SYMBOL
stg
j
SYMBOL
tot
ZSM
Quadruple ESD transient voltage
suppressor
th j-a
working current
continuous forward current
non-repetitive peak forward current t
total power dissipation
non repetitive peak reverse power
dissipation:
storage temperature
junction temperature
thermal resistance from junction to ambient
BZA856A, BZA862A, BZA868A,
BZA820A
PARAMETER
PARAMETER
tot(max)
.
T
T
T
square pulse; t
p
amb
amb
amb
= 1 ms; square pulse
= 25 °C
= 25 °C
= 25 °C
3
CONDITIONS
all diodes loaded
p
= 1 ms; see Fig.3
CONDITIONS
−
−
−
−
−
−
−65
−
BZA800A-series
MIN.
VALUE
370
Product data sheet
note 1
200
3.75
335
24
17
+150
150
MAX.
UNIT
K/W
mA
mA
A
mW
W
W
°C
°C
UNIT