MT46V256M4TG-75:A Micron Technology Inc, MT46V256M4TG-75:A Datasheet - Page 65
MT46V256M4TG-75:A
Manufacturer Part Number
MT46V256M4TG-75:A
Description
IC DDR SDRAM 1GBIT 7.5NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V256M4P-6TA_TR.pdf
(82 pages)
Specifications of MT46V256M4TG-75:A
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
1G (256M x 4)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Figure 36:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
WRITE Burst
Notes:
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
Command
Address
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
DI
b
65
NOP
DI
T1
b
DI
b
Transitioning Data
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP
T2
T2n
1Gb: x4, x8, x16 DDR SDRAM
NOP
T3
Don’t Care
©2003 Micron Technology, Inc. All rights reserved.
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