N25Q128A13B1240F NUMONYX, N25Q128A13B1240F Datasheet - Page 105

• Manufacturer Part Number: N25Q128A13B1240F
• Description: IC SRL FLASH 128MB NMX 24-BGA
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of N25Q128A13B1240F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 108MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N25Q128 - 3 V
9.2.26
Except for the parallelizing of the instruction code and the input data on the two pins DQ0
and DQ1, the instruction functionality is exactly the same as the Write Volatile Enhanced
Configuration Register (WRVECR) instruction of the Extended SPI protocol.
Figure 70. Write Volatile Enhanced Configuration Register instruction sequence
Reset Enable and Reset Memory, Dual I/O
The Reset Enable and Reset Memory operation is used as a system software reset that
puts the device in the power-on reset condition.
This operation consists of two instructions: Reset Enable and Reset Memory.
The Reset operation requires the Reset Enable instruction followed by the Reset Memory
instruction. If the Reset Enable instruction is followed by any instruction other than Reset
Memory, it is disabled. Reset Memory is also disabled if the device is selected by driving
chip select (S) and Clock (C) low.
This instruction functions exactly as the Reset Enable instruction of the Extended SPI
protocol, except that for this instruction the instruction code and input data are on two pins,
DQ0 and DQ1.
DQ0
DQ1
C
S
DIO-SPI
0
Instruction
1
2
3
7
6
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Configuration Register In
5
4
5
Byte
Volatile Enhanced
3
2
6
1
0
7
©2010 Micron Technology, Inc. All rights reserved.
Instructions
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