N25Q128A13B1240F NUMONYX, N25Q128A13B1240F Datasheet - Page 85

• Manufacturer Part Number: N25Q128A13B1240F
• Description: IC SRL FLASH 128MB NMX 24-BGA
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of N25Q128A13B1240F

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16M x 8)
• Speed: 108MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N25Q128 - 3 V
9.1.31
S
C
DQ0
DQ1
S
C
DQ0
DQ1
While the Write Non Volatile Configuration register cycle is in progress, it is possible to
monitor the end of the process by polling status Register write in progress (WIP) bit or the
Flag Status Register Program/Erase Controller bit. The write in progress (WIP) bit is 1
during the self-timed Write Non Volatile Configuration register cycle, and is 0 when it is
completed. When the cycle is completed, the write enable latch (WEL) is reset.
The Write Non Volatile Configuration register (WRNVCR) instruction allows the user to
change the values of all the Non Volatile Configuration Register bits. The Write Non Volatile
Configuration Register impacts the memory behavior only after the next power on
sequence.
Figure 38. Write NV Configuration Register instruction sequence
Read Volatile Configuration Register
The Read Volatile Configuration Register (RDVCR) instruction allows the Volatile
Configuration Register to be read.
Figure 39. Read Volatile Configuration Register instruction sequence
0
High Impedance
0
1
1
High Impedance
2
Instruction
2
Instruction
3
3
4
4
5
5
6
6
7
7
7
8
7
Volatile Configuration
6
8
9 10 11 12 13 14 15
6
5
9 10 11 12 13 14 15
Register Out
5
MSB
4
LS Byte
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Byte
4
3
3
2
2
1
1
0
NVCR In
0
7
15 14 13 12
Volatile Configuration
16 17 18 19 20
6
5
Register Out
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MS Byte
MSB
4
Byte
3
11 10 9
2
1
21 22 23 24
Instructions
0
8
7
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