NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 14
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NAND01GW3B2CN6E
Manufacturer Part Number
NAND01GW3B2CN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
NUMONYX
Specifications of NAND01GW3B2CN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2CN6E
Manufacturer:
Numonyx
Quantity:
5
Part Number:
NAND01GW3B2CN6E
Manufacturer:
ST
Quantity:
20 000
Memory array organization
Figure 6.
14/67
Block
Page
Memory array organization
2048 bytes
Main area
Page buffer, 2112 bytes
2,048 bytes
Block = 64 pages
Page = 2112 bytes (2048 + 64)
x8 DEVICES
bytes
bytes
64
64
8 bits
8 bits
Block
Page
1024 words
1,024 words
Main area
Page buffer, 1056 words
Block = 64 pages
Page = 1056 words (1024 + 32)
x16 DEVICES
words
words
32
32
NAND01G-B2C
16 bits
16 bits
AI09854