NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 58
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NAND01GW3B2CN6E
Manufacturer Part Number
NAND01GW3B2CN6E
Description
IC FLASH 1GBIT 48TSOP
Manufacturer
NUMONYX
Specifications of NAND01GW3B2CN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NAND
Density
1Gb
Access Time (max)
25us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
8b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND01GW3B2CN6E
Manufacturer:
Numonyx
Quantity:
5
Part Number:
NAND01GW3B2CN6E
Manufacturer:
ST
Quantity:
20 000
DC and AC parameters
Figure 30. Block erase AC waveforms
Figure 31. Reset AC waveforms
58/67
I/O
RB
R
CL
AL
W
RB
I/O
E
AL
CL
W
R
Setup command
Block Erase
FFh
(Write Cycle time)
tWLWL
60h
cycle 1
Add.
address
Block
input
cycle 2
Add.
tWHBL
Confirm
(Reset Busy time)
code
D0h
tBLBH4
Block Erase
(Erase Busy time)
tBLBH3
70h
Read Status Register
SR0
NAND01G-B2C
ai14295
ai08043