M29W128GL70N6E NUMONYX, M29W128GL70N6E Datasheet - Page 38

• Manufacturer Part Number: M29W128GL70N6E
• Description: IC FLASH 128MBIT 70NS 56TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W128GL70N6E

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16Mx8, 8Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 56-TSOP
• Package: 56TSOP
• Cell Type: NOR
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 128KByte x 128
• Timing Type: Asynchronous
• Interface Type: Parallel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6.2.8
6.2.9
6.2.10
6.2.11
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Unlock Bypass Block Erase command
The Unlock Bypass Block Erase command can be used to erase one or more memory
blocks at a time. The command requires two bus write operations instead of six using the
standard Block Erase command. The final bus write operation latches the address of the
block and starts the program/erase controller.
To erase multiple block (after the first two bus write operations have selected the first block
in the list), each additional block in the list can be selected by repeating the second bus
write operation using the address of the additional block.
The Unlock Bypass Block Erase command behaves in the same way as the Block Erase
command: the operation cannot be aborted, and a bus read operation to the memory
outputs the status register (see
Unlock Bypass Chip Erase command
The Unlock Bypass Chip Erase command can be used to erase all memory blocks at a time.
The command requires two bus write operations only instead of six using the standard Chip
Erase command. The final bus write operation starts the program/erase controller.
The Unlock Bypass Chip Erase command behaves in the same way as the Chip Erase
command: the operation cannot be aborted, and a bus read operation to the memory
outputs the status register (see
Unlock Bypass Write to Buffer Program command
The Unlock Bypass Write to Buffer command can be used to program the memory in fast
program mode. The command requires two bus write operations less than the standard
Write to Buffer Program command.
The Unlock Bypass Write to Buffer Program command behaves in the same way as the
Write to Buffer Program command: the operation cannot be aborted and a bus read
operation to the memory outputs the status register (see
Program command
The Write to Buffer Program Confirm command is used to confirm an Unlock Bypass Write
to Buffer Program command and to program the N+1 words/bytes loaded in the write buffer
by this command.
Unlock Bypass Enhanced Buffered Program command
The Unlock Bypass Enhanced Buffered Program command can be used to program the
memory in fast program mode. The command requires two address/data loading cycles less
than the standard Enhanced Buffered Program command (see
program commands, 16-bit
The Unlock Bypass Enhanced Buffered Program command behaves identically to the
enhanced buffered program operation using the Enhanced Buffered Program command.
The operation cannot be aborted and a bus read operation to the memory outputs the status
register (see
behavior).
The Enhanced Buffered Program Confirm command is used to confirm an Unlock Bypass
Enhanced Buffered Program command and to program the 256 words loaded in the buffer.
Section 6.2.2: Enhanced Buffered Program command
for details).
mode).
Section 6.1.5: Block Erase command
Section 6.1.4: Chip Erase command
Section 6.2.1: Write to Buffer
Table 14: Enhanced buffered
for details on the
for details).
for details).