R1LP0408CSP-5SC#B0 Renesas Electronics America, R1LP0408CSP-5SC#B0 Datasheet

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R1LP0408CSP-5SC#B0

Manufacturer Part Number
R1LP0408CSP-5SC#B0
Description
IC SRAM 4MBIT 55NS 32SOP
Manufacturer
Renesas Electronics America
Datasheet

Specifications of R1LP0408CSP-5SC#B0

Format - Memory
RAM
Memory Type
SRAM
Memory Size
4M (512K x 8)
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-20°C ~ 70°C
Package / Case
32-SOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
R1LP0408CSP5SC#B0

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
R1LP0408CSP-5SC#B0R1LP0408CSP-5SC
Manufacturer:
RENESAS
Quantity:
5 530
Company:
Part Number:
R1LP0408CSP-5SC#B0R1LP0408CSP-5SC
Manufacturer:
RENESAS
Quantity:
6 250
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website:
Old Company Name in Catalogs and Other Documents
http://www.renesas.com
April 1
Renesas Electronics Corporation
st
, 2010

R1LP0408CSP-5SC#B0 Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

... The R1LP0408C 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). The R1LP0408C-C Series offers low power standby power dissipation; therefore suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin TSOP II ...

Page 4

... R1LP0408C-C Series Ordering Information Type No. Access time R1LP0408CSP-5SC 55 ns R1LP0408CSP-7LC 70 ns R1LP0408CSB-5SC 55 ns R1LP0408CSB-7LC 70 ns R1LP0408CSC-5SC 55 ns R1LP0408CSC-7LC 70 ns Rev.2.00, May.26.2004, page Package 525-mil 32-pin plastic SOP (32P2M-A) 400-mil 32-pin plastic TSOP II (32P3Y-H) 400-mil 32-pin plastic TSOP II reverse (32P3Y-J) ...

Page 5

R1LP0408C-C Series Pin Arrangement 32-pin SOP 32-pin TSOP 1 32 A18 2 31 A16 3 30 A14 4 29 A12 ...

Page 6

... A18 A10 A13 A17 A16 A14 A12 MSB I/O0 I/O7 CS# Timing Pulse Generator WE# OE# Rev.2.00, May.26.2004, page • • • Memory Matrix Row • × 2,048 2,048 • Decoder • Column I/O • Input Column Decoder Data Control LSB A3 A2A1A0 A4 A5 • ...

Page 7

R1LP0408C-C Series Operation Table WE# CS# OE# Mode × × H Not selected Output disable Read Write Write , ×: V Note ...

Page 8

R1LP0408C-C Series DC Characteristics Parameter Input leakage current Output leakage current Operating current Average operating current Standby current −5SC Standby current to +70°C to +40°C to +25°C −7LC to +70°C to +40°C to +25°C Output low voltage Output high voltage ...

Page 9

R1LP0408C-C Series AC Characteristics (Ta = −20 to +70° ± 10%, unless otherwise noted.) CC Test Conditions • Input pulse levels 0 • Input rise and fall time • ...

Page 10

R1LP0408C-C Series Write Cycle Parameter Write cycle time Chip selection to end of write Address setup time Address valid to end of write Write pulse width Write recovery time Write to output in high-Z Data to write time overlap Data ...

Page 11

R1LP0408C-C Series Timing Waveform Read Timing Waveform (WE Address CS# OE# High impedance Dout Rev.2.00, May.26.2004, page Valid address OLZ t HZ ...

Page 12

R1LP0408C-C Series Write Timing Waveform (1) (OE# Clock) Address OE# CS# WE# Dout Din Rev.2.00, May.26.2004, page Valid address OHZ High impedance t DW Valid ...

Page 13

R1LP0408C-C Series Write Timing Waveform (2) (OE# Low Fixed) Address CS# WE Dout Din Rev.2.00, May.26.2004, page Valid address WHZ High ...

Page 14

R1LP0408C-C Series Low V Data Retention Characteristics CC (Ta = −20 to +70°C) Parameter V for data retention CC −5SC Data to +70°C retention to +40°C current to +25°C −7LC to +70°C to +40°C to +25°C Chip deselect to data ...

Page 15

Revision History Rev. Date Contents of Modification Page Description  1.00 Aug.01.2003 Initial issue 2.00 May.26.2004 6 DC characteristics −5SC and −7LC items’ description are divided. 12 Low V −5SC and −7LC items’ description are divided. 12 Low V 2.4 ...

Page 16

Sales Strategic Planning Div. Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble ...

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