SST25VF040B-50-4I-QAF Microchip Technology, SST25VF040B-50-4I-QAF Datasheet - Page 23
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SST25VF040B-50-4I-QAF
Manufacturer Part Number
SST25VF040B-50-4I-QAF
Description
IC FLASH SER 4MB 50MHZ SPI 8WSON
Manufacturer
Microchip Technology
Datasheets
1.SST25VF512A-33-4C-SAE.pdf
(2 pages)
2.SST25VF040B-80-4I-SAE.pdf
(33 pages)
3.SST25VF040B-80-4I-QAE.pdf
(33 pages)
Specifications of SST25VF040B-50-4I-QAF
Memory Type
FLASH
Memory Size
4M (512K x 8)
Operating Temperature
-40°C ~ 85°C
Package / Case
8-WSON
Format - Memory
FLASH
Speed
50MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Architecture
Sectored
Interface Type
SPI
Access Time
50 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
15 mA
Mounting Style
SMD/SMT
Organization
32 KB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
Table 11:DC Operating Characteristics (25VF040B-80-xx-xxxE)
Table 12:Recommended System Power-up Timings
Table 13:Capacitance
Table 14:Reliability Characteristics
Symbol Parameter
I
I
I
I
I
I
V
V
V
V
V
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
DDR
DDR3
DDW
SB
LI
LO
LTH
PU-READ
PU-WRITE
DR
IL
IH
OL
OL2
OH
OUT
IN
END
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
1
1
1
parameter.
parameter.
parameter.
1
1
1
1
Read Current
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Output High Voltage
Parameter
V
V
Description
Output Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
DD
DD
Min to Read Operation
Min to Write Operation
(T
A
= 25°C, f=1 Mhz, other pins open)
23
0.7 V
V
DD
Min
-0.2
DD
Minimum Specification
Limits
Max Units
0.8
0.2
0.4
12
20
30
20
1
1
100 + I
10,000
100
mA
mA
mA
µA
µA
µA
V
V
V
V
V
4 Mbit SPI Serial Flash
DD
Test Conditions
CE#=0.1 V
CE#=0.1 V
CE#=V
CE#=V
V
V
V
V
I
I
I
OL
OL
OH
IN
OUT
DD
DD
=100 µA, V
=1.6 mA, V
=GND to V
=-100 µA, V
=V
=V
=GND to V
DD
DD
DD
DD
, V
Min
Max
Test Condition
Cycles
Units
Years
DD
DD
mA
IN
V
Minimum
/0.9 V
/0.9 V
V
OUT
=V
DD
DD
DD
IN
DD
DD
10
10
, V
=V
=V
DD
= 0V
=V
SST25VF040B
= 0V
, V
DD
DD
DD
DD
DD
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
or V
DD
DD
@33 MHz, SO=open
@80 MHz, SO=open
=V
Min
Min
Min
=V
SS
DD
S71295-06-000
DD
Max
Max
Maximum
Data Sheet
12 pF
Units
6 pF
µs
µs
T11.0 1295
T12.0 1295
T13.0 1295
T14.0 1295
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