AT45DB041D-SU Atmel, AT45DB041D-SU Datasheet - Page 46

IC FLASH 4MBIT 66MHZ 8SOIC

AT45DB041D-SU

Manufacturer Part Number
AT45DB041D-SU
Description
IC FLASH 4MBIT 66MHZ 8SOIC
Manufacturer
Atmel
Datasheets

Specifications of AT45DB041D-SU

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
4M (2048 pages x 264 bytes)
Speed
66MHz
Interface
SPI, RapidS
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Density
4Mb
Access Time (max)
6ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
SOIC EIAJ
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Supply Current
15mA
Mounting
Surface Mount
Pin Count
8
Architecture
Sectored
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
15 mA
Mounting Style
SMD/SMT
Organization
264 B
Current, Input, Leakage
1 μA
Current, Operating
10 mA (Read), 12 mA (Program/Erase)
Current, Output, Leakage
1
Data Retention
20 yrs.
Temperature, Operating
-40 to +85 °C
Time, Access
6 ns
Time, Address Hold
5
Time, Address Setup
5
Time, Fall
6.8 ns
Time, Rise
6.8 ns
Voltage, Input, High
1.89 to 2.52 V
Voltage, Input, Low
0.81 to 1.08 V
Voltage, Output, High
2.5 to 3.4 V
Voltage, Output, Low
0.4 V
Voltage, Supply
2.7 to 3.6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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25. Auto Page Rewrite Flowchart
Figure 25-1. Algorithm for Programming or Reprogramming of the Entire Array Sequentially
Notes:
46
1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by-
2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page
AT45DB041D
page.
to Main Memory Page Program operation.
within the entire array.
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
START
END
provide address
and data
MEMORY PAGE PROGRAM
BUFFER TO MAIN
BUFFER WRITE
(84H, 87H)
(83H, 86H)
3595P–DFLASH–09/09

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