MT48LC64M8A2TG-75 L:C Micron Technology Inc, MT48LC64M8A2TG-75 L:C Datasheet - Page 42
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MT48LC64M8A2TG-75 L:C
Manufacturer Part Number
MT48LC64M8A2TG-75 L:C
Description
IC SDRAM 512MBIT 133MHZ 54TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT48LC64M8A2TG-75C_TR.pdf
(68 pages)
Specifications of MT48LC64M8A2TG-75 L:C
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
512M (64M x 8)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Electrical Specifications
Table 10:
Temperature and Thermal Impedance
PDF: 09005aef809bf8f3/Source: 09005aef80818a4a
512MbSDRAM.fm - Rev. L 10/07 EN
Parameter
V
V
Voltage on any pin relative to V
SDRAM device temperatures
Power dissipation
DD
DD
Q supply voltage relative to V
supply voltage relative to V
Absolute Maximum Ratings
Note:
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
It is imperative that the SDRAM device’s temperature specifications, shown in Table 11
on page 43, be maintained to ensure the junction temperature is in the proper operating
range to meet data sheet specifications. An important step in maintaining the proper
junction temperature is using the device’s thermal impedances correctly. The thermal
impedances are listed in Table 12 on page 43 for the applicable die revision and pack-
ages being made available. These thermal impedance values vary according to the
density, package, and particular design used for each device.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications” prior to using the thermal impedances
listed in Table 12 on page 43. To ensure the compatibility of current and future designs,
contact Micron Applications Engineering to confirm thermal impedance values. The
SDRAM device’s safe junction temperature range can be maintained when the T
fication is not exceeded. In applications where the device’s ambient temperature is too
high, use of forced air and/or heat sinks may be required to satisfy the case temperature
specifications.
SS
SS
For further information, refer to technical note TN-00-08: Thermal Applications, available
on Micron’s Web site.
SS
T
A
V
IN
Symbol
42
, V
V
Commercial
Industrial
Storage (plastic)
V
DD
OUT
DD
–
Q
, NC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
–1.0
–1.0
–1.0
–40
–55
512Mb: x4, x8, x16 SDRAM
0
–
Electrical Specifications
©2000 Micron Technology, Inc. All rights reserved.
+155
Max
+4.6
+4.6
+4.6
+70
+85
+1
Units
°C
°C
°C
W
V
V
V
C
Notes
speci-
1
1
1