MT46H8M32LFB5-75:A TR Micron Technology Inc, MT46H8M32LFB5-75:A TR Datasheet - Page 49
MT46H8M32LFB5-75:A TR
Manufacturer Part Number
MT46H8M32LFB5-75:A TR
Description
IC DDR SDRAM 256MBIT 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H16M16LFBF-6A_TR.pdf
(79 pages)
Specifications of MT46H8M32LFB5-75:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
256M (8Mx32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Deep Power-Down (DPD)
Figure 34:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Deep Power-Down Command
Deep power-down is an operating mode used to achieve maximum power reduction by
eliminating the power of the memory array. Data will not be retained when the device
enters deep power-down mode.
Before entering DPD mode, the DRAM must be in all banks idle state with no activity on
the data bus (
with RAS# and CAS# HIGH at the rising edge of the clock, while CKE is LOW. CKE must
be held LOW to maintain DPD mode. The clock must be stable prior to exiting DPD
mode. This mode is exited by asserting CKE HIGH with either a NOP or DESELECT
command present on the command bus. Upon exit from DPD mode, 200µs of valid
clocks either with a NOP or DESELECT command present on the command bus are
required, and a PRECHARGE ALL command and a full DRAM initialization sequence are
required.
BA0, BA1
A0–A12
RAS#
CAS#
WE#
CKE
CS#
t
RP time must be met). This mode is entered by holding CS# and WE# LOW
Don’t Care
49
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
©2005 Micron Technology, Inc. All rights reserved.
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