IS42S16100C1-5TL ISSI, Integrated Silicon Solution Inc, IS42S16100C1-5TL Datasheet - Page 26

• Manufacturer Part Number: IS42S16100C1-5TL
• Description: IC SDRAM 16MBIT 200MHZ 50TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S16100C1-5TL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 16M (1M x 16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 50-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

26
IS42S16100C1
Read With Auto-Precharge
The read with auto-precharge command first executes a
burst read operation and then puts the selected bank in
the precharged state automatically. After the precharge
completes, the bank goes to the idle state. Thus this
command performs a read command and a precharge
command in a single operation.
During this operation, the delay period (t
last burst data output and the start of the precharge opera-
tion differs depending on the CAS latency setting.
When the CAS latency setting is two, the precharge opera-
tion starts on one clock cycle before the last burst data is
output (t
CAS latency = 3, burstlength = 4
CAS latency = 2, burstlength = 4
COMMAND
COMMAND
pql
READ WITH AUTO-PRECHARGE
READ WITH AUTO-PRECHARGE
CLK
CLK
= –1). When the CAS latency setting is
DQ
DQ
(BANK 0)
(BANK 0)
READA 0
READA 0
pql
D
) between the
OUT
PRECHARGE START
PRECHARGE START
0
D
D
OUT
OUT
0
1
three, the precharge operation starts on two clock cycles
before the last burst data is output (t
the selected bank can be made active after a delay of t
from the start position of this precharge operation.
The selected bank must be set to the active state before
executing this command.
The auto-precharge function is invalid if the burst length
is set to full page.
D
D
OUT
OUT
Integrated Silicon Solution, Inc. — www.issi.com
CAS Latency
t
PQL
1
2
t
pql
t
D
D
RP
OUT
OUT
t
PQL
2
3
t
RP
D
ACT 0
OUT
3
–2
3
pql
= –2). Therefore,
ACT 0
–1
2
08/24/09
Rev. F
rp