IS42S16100C1-5TL ISSI, Integrated Silicon Solution Inc, IS42S16100C1-5TL Datasheet - Page 5

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IS42S16100C1-5TL

Manufacturer Part Number
IS42S16100C1-5TL
Description
IC SDRAM 16MBIT 200MHZ 50TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS42S16100C1-5TL

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
16M (1M x 16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
50-TSOPII
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS42S16100C1
DC RECOMMENDED OPERATING CONDITIONS
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
2. All voltages are referenced to GND.
3. V
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
08/24/09
ABSOLUTE MAXIMUM RATINGS
Symbol
C
C
CI/O
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Symbol
V
V
V
V
P
I
T
T
V
ih
cs
Symbol
opr
out
stg
iN
iN
dd max
ddq max
iN
d max
dd
(max) = V
1
2
V
V
, V
ih
il
ddq
ddq
Parameter
Input Capacitance: A0-A11
Input Capacitance: (CLK, CKE, CS, RAS, CAS, WE, LDQM, UDQM)
Data Input/Output Capacitance: DQ0-DQ15
+ 2.0V with a pulse width ≤ 3 ns.
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output Shorted Current
operating Temperature
Storage Temperature
(4)
(3)
(1)
(1,2)
Min.
-0.3
3.0
2.0
(At T
a
= 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz)
Typ.
3.3
(2)
(
At T
V
dd
a
Max.
+0.8
3.6
= 0 to +70°C)
+ 0.3
Com
Ind.
Unit
V
V
V
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
–1.0 to +4.6 V
–55 to +150 °C
-40 to +85
0 to +70
Rating
50
Typ.
1
Unit
W
mA
°C
°C
Max.
4
4
5
Unit
pF
pF
pF
5

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