MT46H8M16LFCF-75 TR Micron Technology Inc, MT46H8M16LFCF-75 TR Datasheet - Page 24
![IC DDR SDRAM 128MBIT 60VFBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT46H8M16LFCF-75 TR
Manufacturer Part Number
MT46H8M16LFCF-75 TR
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H8M16LFCF-10.pdf
(66 pages)
Specifications of MT46H8M16LFCF-75 TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1276-1
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Figure 12:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
Nonconsecutive READ Bursts
Notes:
COMMAND
COMMAND
1. D
2. BL = 4 in the cases shown (applies for bursts of 8 as well; if BL = 2, the BST command shown
3. Shown with nominal
4. This example represents nonconsecutive READ commands issued to the device.
ADDRESS
ADDRESS
can be a NOP).
OUT
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
n (or b) = data-out from column n (or column b).
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
CL = 2
t
AC,
NOP
NOP
T1
T1
CL = 3
t
DQSCK, and
24
T1n
T1n
D
OUT
n
NOP
NOP
T2
T2
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
n + 1
D
OUT
T2n
T2n
D
n + 2
D
READ
Bank,
READ
Bank,
OUT
Col b
OUT
Col b
n
T3
T3
D
n + 3
n + 1
D
T3n
T3n
OUT
OUT
CL = 2
DON’T CARE
n + 2
D
OUT
T4
T4
NOP
NOP
CL = 3
©2004 Micron Technology, Inc. All rights reserved.
n + 3
D
T4n
T4n
OUT
D
OUT
b
TRANSITIONING DATA
T5
T5
NOP
NOP
Operations
D
b + 1
OUT
T5n
T5n
D
b + 2
D
OUT
OUT
b
T6
T6
NOP
NOP
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