MT48H32M16LFCJ-75:A TR Micron Technology Inc, MT48H32M16LFCJ-75:A TR Datasheet - Page 48

IC SDRAM 512MBIT 133MHZ 54VBGA

MT48H32M16LFCJ-75:A TR

Manufacturer Part Number
MT48H32M16LFCJ-75:A TR
Description
IC SDRAM 512MBIT 133MHZ 54VBGA
Manufacturer
Micron Technology Inc

Specifications of MT48H32M16LFCJ-75:A TR

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (32Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1332-2
Table 12:
PDF: 09005aef81ca5de4/Source: 09005aef81ca5e03
MT48H32M16LF_1.fm - Rev. J 2/08 EN
Parameter
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data High-Z during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or REFRESH command
Data-out High-Z from PRECHARGE command
AC Functional Characteristics
Notes: 5, 6, 8, 9,11; notes appear on pages 51–52
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
48
CL = 3
CL = 2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
t
t
ROH(3)
ROH(2)
t
t
t
t
t
t
t
CKED
t
t
DQM
DWD
t
t
t
t
MRD
DQD
DQZ
CCD
DAL
PED
DPL
BDL
CDL
RDL
-75
Electrical Specifications
1
1
1
0
0
2
0
5
2
1
1
2
2
3
2
©2005 Micron Technology, Inc. All rights reserved.
-8
3
2
1
1
1
0
0
2
0
5
2
1
1
2
2
Units
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
Notes
15, 21
16, 21
16, 21
17
14
14
17
17
17
17
17
17
25
17
17

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