MT47H64M16HR-3:E TR Micron Technology Inc, MT47H64M16HR-3:E TR Datasheet - Page 103
MT47H64M16HR-3:E TR
Manufacturer Part Number
MT47H64M16HR-3:E TR
Description
IC DDR2 SDRAM 1GBIT 3NS 84FBGA
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Specifications of MT47H64M16HR-3:E TR
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (64M x 16)
Speed
3ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
84-FBGA
Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
220mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1341-2
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Figure 57: Write Burst
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
Notes:
DQS, DQS#
DQS, DQS#
DQS, DQS#
Command
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
1. Subsequent rising DQS signals must align to the clock within
2. DI b = data-in for column b.
3. Three subsequent elements of data-in are applied in the programmed order following
4. Shown with BL = 4, AL = 0, CL = 3; thus, WL = 2.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
Address
DI b.
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Bank a,
WRITE
Col b
T0
WL ± t DQSS
WL - t DQSS
WL + t DQSS
NOP
T1
103
DI
b
NOP
T2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DI
b
DI
b
Transitioning Data
T2n
1Gb: x4, x8, x16 DDR2 SDRAM
t DQSS 5
NOP
T3
5
t DQSS 5
T3n
© 2004 Micron Technology, Inc. All rights reserved.
t
NOP
DQSS.
T4
Don’t Care
WRITE
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