MT41J128M8HX-15E:D TR Micron Technology Inc, MT41J128M8HX-15E:D TR Datasheet - Page 58

• Manufacturer Part Number: MT41J128M8HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc

Specifications of MT41J128M8HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (128M x 8)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1376-2

Table 44:
Output Characteristics and Operating Conditions
Table 45:
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
Parameter/Condition
Output leakage current: DQ are disabled;
0V ≤ V
Output slew rate: Single-ended; For rising and falling
edges, measure between V
V
Single-ended DC high-level output voltage
Single-ended DC mid-point level output voltage
Single-ended DC low-level output voltage
Single-ended AC high-level output voltage
Single-ended AC low-level output voltage
Delta R
Test load for AC timing and output slew rates
OH
(
AC
OUT
) = V
ON
≤ V
between pull-up and pull-down for DQ/DQS
REF
DD
40Ω Output Driver Voltage and Temperature Sensitivity
Single-Ended Output Driver Characteristics
All voltages are referenced to Vss
+ 0.1 × V
Q; ODT is disabled; ODT is HIGH
Notes:
DD
Q
OL
The DRAM uses both single-ended and differential output drivers. The single-ended
output driver is summarized in Table 45 while the differential output driver is summa-
rized in Table 46 on page 59.
1. RZQ of 240Ω (±1 percent) with RZQ/7 enabled (default 34Ω driver) and is applicable after
2. V
3. See Figure 32 on page 60 for the test load configuration.
4. See Table 35 on page 55 for IV curve linearity. Do not use AC test load.
5. See Table 47 on page 61 for output slew rate.
6. See Table 35 on page 55 for additional information.
7. See Figure 30 on page 59 for an example of a single-ended output signal.
(
AC
proper ZQ calibration has been performed at a stable temperature and voltage
(V
) = V
TT
DD
= V
Q = V
REF
dR
dR
dR
dR
dR
dR
Change
DD
ON
ON
ON
ON
- 0.1 × V
ON
ON
Q/2.
DD
dVM
dTM
dVH
dTH
dVL
dTL
, V
SS
DD
Q = V
Q and
Output Characteristics and Operating Conditions
SS
).
Symbol
MM
V
V
V
58
V
V
SRQ
OM
OH
OH
OL
OL
I
OZ
PUPD
(
(
Min
(
(
(
DC
AC
DC
AC
SE
DC
0
0
0
0
0
0
Output to V
)
)
)
)
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
–10
2.5
–5
TT
V
V
1Gb: x4, x8, x16 DDR3 SDRAM
TT
TT
(V
0.8 × V
0.5 × V
0.2 × V
+ 0.1 × V
Max
- 0.1 × V
0.15
0.15
0.15
DD
1.5
1.5
1.5
Q/2) via 25Ω resistor
DD
DD
DD
Q
Q
Q
DD
DD
Q
Max
Q
+10
+5
©2006 Micron Technology, Inc. All rights reserved.
5
%/mV
%/mV
%/mV
Units
%/°C
%/°C
%/°C
Unit
V/ns
µA
%
V
V
V
V
V
1, 2, 3, 5
1, 2, 3, 5
Notes
1, 2, 3
1, 2, 4
1, 2, 4
1, 2, 4
1, 6
1
3