CY62148BLL-70SC Cypress Semiconductor Corp, CY62148BLL-70SC Datasheet - Page 4

• Manufacturer Part Number: CY62148BLL-70SC
• Description: IC SRAM 4MBIT 70NS 32SOIC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62148BLL-70SC

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 4M (512K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-SOIC (11.30mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 428-1075

Document #: 38-05039 Rev. *C
Switching Characteristics
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
Notes:
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
5. Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
6. At any given temperature and voltage condition, t
7. t
8. The internal write time of the memory is defined by the overlap of CE LOW, and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these
I
signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
OL
HZOE
/I
Parameter
OH
, t
HZCE
and 100-pF load capacitance.
, and t
[8]
HZWE
are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High Z
[5]
Over the Operating Range
HZCE
[6]
[6]
[6, 7]
[6]
[6, 7]
[6, 7]
Description
is less than t
LZCE
, t
HZOE
is less than t
LZOE
, and t
HZWE
is less than t
Min.
70
10
10
70
60
60
55
30
5
0
0
0
0
5
62148BLL-70
LZWE
CY62148B MoBL™
for any given device.
Max.
70
70
35
25
25
70
25
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Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns